B‐doped Si(001) grown by gas‐source molecular‐beam epitaxy from Si2H6and B2H6:B incorporation and electrical properties
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358658
Reference32 articles.
1. Selective growth condition in disilane gas source silicon molecular beam epitaxy
2. Limiting conditions of Si selective epitaxial growth in Si2H6gas‐source molecular beam epitaxy
3. Gas source silicon molecular beam epitaxy using silane
4. High Quality Silicon Epitaxy at 500°C using Silane Gas-Source Molecular Beam Technique
5. Growth kinetics in silane gas-source molecular beam epitaxy
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