Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1324701
Reference32 articles.
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5. Si(001)2×1 gas‐source molecular‐beam epitaxy from Si2H6: Growth kinetics and boron doping
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