Effects of H coverage on Ge segregation during Si1−xGex gas-source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366474
Reference28 articles.
1. Prospects of SiGe heterodevices
2. Physics and applications of GexSi1-x/Si strained-layer heterostructures
3. Disilane gas source Si-MBE
4. Ge(001) gas‐source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: Growth kinetics and surface roughening
5. Mechanisms and kinetics of Si atomic‐layer epitaxy on Si(001)2×1 from Si2H6
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2. Ab Initio Study of H2 Associative Desorption on Ad-Dimer Reconstructed Si(001) and Ge(001)-(2×1) Surfaces;The Journal of Physical Chemistry C;2014-05-01
3. The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si0.7Ge0.3 films by rapid thermal chemical vapor deposition;Applied Physics Letters;2012-10
4. Hydrogen desorption kinetics and band bending for 6H–SiC(0 0 0 1) surfaces;Surface Science;2009-10
5. Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 × 1 to GeH4;Journal of the American Chemical Society;2008-03-26
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