Prospects of SiGe heterodevices-Reference-Cited by-同舟云学术

Prospects of SiGe heterodevices

Published:1995-05 Issue: Volume:150 Page:921-925
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kasper E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. A. Schüppen, A. Gruhle, U. Erben, H. Kibbel and U. König, in: Tech. Digest DRC 94, p. IIIA-2

2. E. Crabbe, B. Meyerson, J. Stork and D. Harame, in: Tech. Digest IEDM 93, p. 83

3. D. Harame, J. Stork, B. Meyerson, K. Hsu, K. Jenkins, J. Cressler, P. Restle, E. Crabbe, S. Subbanna, T. Tice, B. Scharf and J. Yasaitis, in: Tech. Digest IEDM 93, p. 71

4. Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

5. Si/siGe heterojunction bipolar transistor with base doping highly exceeding emitter doping concentration

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