Ab Initio Study of H2 Associative Desorption on Ad-Dimer Reconstructed Si(001) and Ge(001)-(2×1) Surfaces
Author:
Affiliation:
1. Department of Materials Science & Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
2. Zyvex Laboratories, LLC, 1301 North Plano Road, Richardson, Texas 75081, United States
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp411903z
Reference46 articles.
1. Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope
2. Silicon-based optoelectronics
3. Si2H6Dissociative Chemisorption and Dissociation on Si(100)-(2×1) and Ge(100)-(2×1)
4. Patterned atomic layer epitaxy of Si/Si(001):H
5. Semiconductor Surface Reconstruction: The Structural Chemistry of Two-Dimensional Surface Compounds
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