Growth Mechanism of SiC CVD: Surface Etching by H2, H Atoms, and HCl
Author:
Affiliation:
1. Department of Physics, Chemistry and Biology, Linköping University, SE−581 83 Linköping, Sweden
Funder
Vetenskapsr?det
Stiftelsen f?r?Strategisk Forskning
Sveriges Regering
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpca.7b10800
Reference35 articles.
1. Material science and device physics in SiC technology for high-voltage power devices
2. SiC power MOSFETs performance, robustness and technology maturity
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5. Chemical vapour deposition of coatings
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