Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications-Reference-Cited by-同舟云学术

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Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

Published:2011-12-02 Issue:4 Volume:112 Page:2434-2453
ISSN:0009-2665
Container-title:Chemical Reviews
language:en
Short-container-title:Chem. Rev.

Author:

Pedersen Henrik¹,Leone Stefano¹,Kordina Olof¹,Henry Anne¹,Nishizawa Shin-ichi²,Koshka Yaroslav³,Janzén Erik¹

Affiliation:

1. Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden

2. National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

3. Department of Electrical and Computer Engineering, Mississippi State University, Mississippi State, Mississippi 39762, United States

Publisher

American Chemical Society (ACS)

Subject

General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cr200257z

Reference209 articles.

1. CRC Handbook of Chemistry and Physics,91sted.CRC Press:Boca Raton, FL, 2010–2011; pp12–212.

2. Untersuchungen über die Flussspathsäure und deren merkwürdigsten Verbindungen

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