Reactive Infiltration: Effects of Different Parameters

Abstract

Currently, the production of complex SiC and SiC/SiC parts through reactive infiltration is one of the most widely used technologies, due to its versatility and cost-effectiveness compared to more conventional technologies such as Hot Isostatic Pressing (HIP). This technology, while widely adopted, still faces some debate regarding the mechanisms of infiltration. Questions persist about what determines how infiltration occurs and whether the process is governed by physics (flow dynamics) or chemistry (reactions at the triple line (LT: (contact line between the solid, liquid and gas phases)). The present work provides new strong/consistent proof that reactive infiltration is mainly controlled by chemical reaction.