Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 × 1 to GeH4
Author:
Affiliation:
1. Department of Chemical Engineering, National Taiwan University of Science and Technology, 43, Keelung Road, Section 4, Taipei, 106, Taiwan
Publisher
American Chemical Society (ACS)
Subject
Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis
Link
https://pubs.acs.org/doi/pdf/10.1021/ja710802s
Reference17 articles.
1. Field and photo-field electron emission from self-assembled Ge–Si nanostructures with quantum dots
2. Ge on Si p-i-n photodiodes operating at 10Gbit∕s
3. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
4. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
5. Kinetics of silicon epitaxy using SiH4in a rapid thermal chemical vapor deposition reactor
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