Access to metastable [GeH2]n materials via a molecular “bottom-up” approach-Reference-Cited by-同舟云学术

Access to metastable [GeH2]n materials via a molecular “bottom-up” approach

Published:2021 Issue:47 Volume:50 Page:17688-17696
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Sinclair Jocelyn¹^ORCID,Medroa del Pino William¹^ORCID,Aku-Dominguez Kwami¹,Minami Yohei²,Kiran Anagha¹,Ferguson Michael J.¹^ORCID,Yasuda Makoto²^ORCID,Rivard Eric¹^ORCID

Affiliation:

1. Department of Chemistry, University of Alberta, 11227 Saskatchewan Dr., Edmonton, Alberta, Canada T6G 2G2

2. Department of Applied Chemistry, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

Abstract

The molecular precursor Ge(OtBu)2 was combined with soluble hydride sources to either yield metastable [GeH2]n materials (orange solids) or the deposition of nanoscale films of Ge from solution.

Funder

Japan Society for the Promotion of Science

Natural Sciences and Engineering Research Council of Canada

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/DT/D1DT02850B

Reference68 articles.

1. Silicon chemical vapor deposition one step at a time: fundamental studies of silicon hydride chemistry

2. The use of aluminum and gallium hydrides in materials science

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5. A Volatile Dialane Complex from Ring Expansion of an N-Heterocyclic Carbene and Its Use in the Thermal Atomic Layer Deposition of Aluminum Metal Films

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