Ge on Si p-i-n photodiodes operating at 10Gbit∕s
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2182110
Reference8 articles.
1. GexSi1−xstrained‐layer superlattice waveguide photodetectors operating near 1.3 μm
2. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
3. High-quality Ge epilayers on Si with low threading-dislocation densities
4. High performance germanium-on-silicon detectors for optical communications
5. High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation
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