Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography
Author:
Affiliation:
1. Oak Ridge National Laboratory; Oak Ridge TN 37831 USA
2. HRL Laboratories, LLC; 3011 Malibu Canyon Rd. Malibu CA 90265 USA
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials
Reference39 articles.
1. Strained p-Channel FinFETs With Extended $\Pi$-Shaped Silicon–Germanium Source and Drain Stressors
2. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes
3. Near and mid infrared silicon/germanium based photodetection
4. Coherent singlet-triplet oscillations in a silicon-based double quantum dot
5. Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures
Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope‐Purified Silicon Quantum Wells;Advanced Science;2024-09-11
2. Interface sharpness in stacked thin film structures: a comparison of soft X-ray reflectometry and transmission electron microscopy;Journal of Micro/Nanopatterning, Materials, and Metrology;2024-08-23
3. Compressively strained epitaxial Ge layers for quantum computing applications;Materials Science in Semiconductor Processing;2024-05
4. Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy;npj Quantum Information;2024-03-27
5. Low disorder and high valley splitting in silicon;npj Quantum Information;2024-03-13
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3