Strained p-Channel FinFETs With Extended $\Pi$-Shaped Silicon–Germanium Source and Drain Stressors-Reference-Cited by-同舟云学术

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Strained p-Channel FinFETs With Extended $\Pi$-Shaped Silicon–Germanium Source and Drain Stressors

Published:2007-10 Issue:10 Volume:28 Page:905-908
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tan Kian-Ming,Liow Tsung-Yang,Lee Rinus T. P.,Hoe Keat Mun,Tung Chih-Hang,Balasubramanian N.,Samudra Ganesh S.,Yeo Yee-Chia

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4317649/04317677.pdf?arnumber=4317677

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