Si(001)2×1 gas‐source molecular‐beam epitaxy from Si2H6: Growth kinetics and boron doping
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357712
Reference33 articles.
1. Selective growth condition in disilane gas source silicon molecular beam epitaxy
2. Limiting conditions of Si selective epitaxial growth in Si2H6gas‐source molecular beam epitaxy
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4. High Quality Silicon Epitaxy at 500°C using Silane Gas-Source Molecular Beam Technique
5. Growth kinetics in silane gas-source molecular beam epitaxy
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