Choice of electrolyte for doping profiling in Si by electrochemical C–V technique
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
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1. The electrochemical characterization of n-type gallium arsenide
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1. Determination of background doping polarity of unintentionally doped semiconductor layers;Applied Physics Letters;2020-02-18
2. ECV Doping Profile Measurements in Silicon Using Conventional Potentiostat;Journal of Electronic Materials;2018-09-21
3. Manufacturing metrology for c-Si module reliability and durability Part II: Cell manufacturing;Renewable and Sustainable Energy Reviews;2016-06
4. Electrochemical capacitance-voltage characterization of plasma-doped ultra-shallow junctions;Frontiers of Electrical and Electronic Engineering in China;2008-01
5. A comparative study for profiling ultrathin boron layers in Si;Crystal Research and Technology;2003-11
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