Electrochemical capacitance‐voltage depth profiling of nanometer‐scale layers fabricated by Ga+focused ion beam implantation into silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107860
Reference11 articles.
1. On the determination of dopant/carrier distributions
2. Ultrashallow Si p+–n junction fabrication by low energy Ga+ focused ion beam implantation
3. Low energy off-axis focused ion beam Ga+ implantation into Si
4. Focused ion beam technology and applications
5. Secondary ion mass spectrometry depth profiling of nanometer-scale p+-n junctions fabricated by Ga+ focused ion beam implantation
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4. Electrochemical capacitance-voltage characterization of plasma-doped ultra-shallow junctions;Frontiers of Electrical and Electronic Engineering in China;2008-01
5. Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
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