Author:
Wu Huizhen,Ru Guoping,Zhang Yonggang,Jin Chengguo,Mizuno Bunji,Jiang Yulong,Qu Xinping,Li Bingzong
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Chu P K, Felch S B, Kellerman P, et al. Plasma doping: progress and potential. Solid State Technology. 1999, 42(9): 55, 56, 58, 60
2. Skorupa W, Gebel T, Yankov R A, et al. Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing. Journal of the Electrochemical Society, 2005, 152(6): G436–G440
3. Baek S, Heo S, Choi H, et al. Characteristics of heavily doped p+/n ultrashallow junction prepared by plasma doping and laser annealing. Journal of Vacuum Science and Technology, 2005, B23(1): 257–261
4. Schroder D K. Semiconductor Material and Device Characterization. New York: John Wiley & Sons Inc., 1990, 23, 41, 55, 85, 203
5. Alzanki T, Gwilliam R, Emerson N, et al. Concentration profiles of antimony-doped shallow layers in silicon. Semiconductor Science and Technology, 2004, 19(6): 728–732
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