Investigation of p+ emitter formation for n-type silicon solar cells application
Author:
Publisher
IOP Publishing
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/2053-1591/ab582e/pdf
Reference27 articles.
1. Properties of boron-rich layer formed by boron diffusion in n-type silicon
2. Optimization of Boron Diffusion for Screen Printed n-PERT Solar Cells
3. Lifetime Degradation on n-type Wafers with Boron-diffused and SiO2/SiN-passivated Surface
4. 21.0%-efficient co-diffused screen printed n-type silicon solar cell with rear-side boron emitter
5. Avoidance of boron rich layer formation in the industrial boron spin-on dopant diffused n-type silicon solar cell without additional oxidation process
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