The effect of silicon films impurity compensation on the performance of silicon drift detector-Reference-Cited by-同舟云学术

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The effect of silicon films impurity compensation on the performance of silicon drift detector

Published:2023-08 Issue: Volume:138 Page:105856
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Luo Wei,Jia Rui,Wang Longjie,Guo Chunlin,Jiang Shuai,Tian Xiaorang,Ouyang Xiaoping,Li Xing

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Semiconductor drift chambers for position and energy measurements;Rehak;Nucl. Instrum. Methods Phys. Res. A,1985

2. Progress in Semiconductor Drift Detectors;Rehak,1998

3. The first 25 years of silicon drift detectors: a personal view;Guazzoni;Nucl. Instrum. Methods Phys. Res. Sect. A Accel. Spectrom. Detect. Assoc. Equip.,2010

4. Works of art investigation with silicon drift detectors;Leutenegger;Nucl. Instrum. Methods Phys. Res.,2000

5. Development of novel on-chip, customer-design spiral biasing adaptor on for Si drift detectors and detector arrays for X-ray and nuclear physics experiments;Li;Nucl. Instrum. Methods Phys. Res.,2014

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