Determination of background doping polarity of unintentionally doped semiconductor layers-Reference-Cited by-同舟云学术

Determination of background doping polarity of unintentionally doped semiconductor layers

Published:2020-02-18 Issue:7 Volume:116 Page:072103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fink D. R.¹,Lee S.¹,Kodati S. H.¹,Rogers V.¹,Ronningen T. J.¹^ORCID,Winslow M.²,Grein C. H.²,Jones A. H.³,Campbell J. C.³,Klem J. F.⁴,Krishna S.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Department of Physics, University of Illinois, Chicago, Illinois 60607, USA

3. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, USA

4. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Funder

Directed Energy - Joint Transition Office

U.S. Department of Energy, National Nuclear Science Administration

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5142377

Reference26 articles.

1. Capacitance-voltage investigation of high-purity InAs∕GaSb superlattice photodiodes

2. Dark current analysis of InAs/GaSb superlattices at low temperatures

3. Electrical modeling of InSb PiN photodiode for avalanche operation

4. Minority‐carrier lifetimes and internal quantum efficiency of surface‐free GaAs

5. Type-II superlattice photodetectors versus HgCdTe photodiodes

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