Electron transport properties of Si/SiGe heterostructures: Measurements and device implications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109949
Reference14 articles.
1. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
2. High electron mobility in modulation‐doped Si/SiGe
3. Observation of the fractional quantum Hall effect in Si/SiGe heterostructures
4. High-performance Si/SiGe n-type modulation-doped transistors
5. High-performance Si/SiGe n-type modulation-doped transistors
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