Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions-Reference-Cited by-同舟云学术

Electrical properties and band alignments of Sb₂Te₃/Si heterojunctions, low-barrier Sb₂Te₃/n-Si and high-barrier Sb₂Te₃/p-Si junctions

Published:2024-03-01 Issue:3 Volume:17 Page:036503
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Okada Naoya^ORCID,Chang Wen Hsin^ORCID,Hatayama Shogo^ORCID,Saito Yuta^ORCID,Irisawa Toshifumi^ORCID

Abstract

Abstract We investigated the electrical junction properties of the layered Sb2Te3 film formed on Si substrates. The current−voltage characteristics of the Sb2Te3/n-Si heterojunction showed an ohmic properties, whereas the Sb2Te3/p-Si heterojunction exhibited rectifying properties with a high barrier height of 0.77 eV. The capacitance−voltage characteristics of MOS capacitors with the Sb2Te3 electrode indicated an effective work function of 4.44 eV for the Sb2Te3 film. These findings suggest that the Sb2Te3/Si heterostructure possesses a low conduction band offset, as inferred from the temperature dependence of the current−voltage characteristics of the Sb2Te3/n-Si.

Funder

Japan Society for the Promotion of Science

Publisher

IOP Publishing

Link

https://iopscience.iop.org/article/10.35848/1882-0786/ad2d75/pdf

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