Ge/Si heterojunction photodiodes fabricated by low temperature wafer bonding
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference16 articles.
1. Effectiveness of SiGe Buffer Layers in Reducing Dark Currents of Ge-on-Si Photodetectors
2. High performance, waveguide integrated Ge photodetectors
3. Ultralow dark current Ge/Si(100) photodiodes with low thermal budget
4. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects
5. High-performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration
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1. Separation of wafer bonding interface from heterogenous mismatched interface achieved high quality bonded Ge-Si heterojunction;Applied Surface Science;2024-07
2. Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions;Applied Physics Express;2024-03-01
3. 基于poly-Si键合层的SACM型Ge/Si APD的优化设计研究;Chinese Journal of Lasers;2024
4. Bonding mechanisms and electrical properties of Ge/Si and Si/Si bonded wafers achieved by thin microcrystalline Ge interlayer;Journal of Alloys and Compounds;2023-11
5. Deposition of GeSn film on Si substrate by plasma-enhanced chemical vapor deposition using GeCl4 and SnCl4 in H2 for developing short-wave infrared Si photonics;Materials Science in Semiconductor Processing;2023-08
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