Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100206
Reference10 articles.
1. Modulation doping in GexSi1−x/Si strained layer heterostructures
2. Amorphous SiC/Si three‐color detector
3. Oxygen-Doped Si Epitaxial Film (OXSEF)
4. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
5. Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface Optimization
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