First principles investigation of photoelectric properties of Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si188.svg" display="inline" id="d1e1006"><mml:msub><mml:mrow /><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math>O<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si189.svg" display="inline" id="d1e1014"><mml:msub><mml:mrow /><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:math> Doped with group IV elements (Si,Ge,Sn)-Reference-Cited by-同舟云学术

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First principles investigation of photoelectric properties of Ga2O3 Doped with group IV elements (Si,Ge,Sn)

Published:2023-03 Issue: Volume:34 Page:105127
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Yu Miao,Peng Bo,Sun Kai,Yu Jiangang,Yuan Lei,Hu Jichao,Zhang Yuming,Jia Renxu^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference52 articles.

1. Review of Ga2O3-based optoelectronic devices;Guo;Mater.i Today Phys.,2019

2. A review of Ga2O3 materials, processing, and devices;Pearton;Appl. Phys. Rev.,2018

3. Guest Editorial: The dawn of gallium oxide microelectronics;Higashiwaki;Appl. Phys. Lett.,2018

4. β-Ga2O3 for wide-bandgap electronics and optoelectronics;Galazka;Semicond. Sci. Technol.,2018

5. Current status of Ga2O3 power devices;Higashiwaki;Japan. J. Appl. Phys.,2016

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-performance solar-blind photodetector based on Si-doped α-Ga2O3 thin films grown by mist chemical vapor deposition;Journal of Alloys and Compounds;2024-10

2. High Electron Mobility in Si-Doped Two-Dimensional β-Ga2O3 Tuned Using Biaxial Strain;Materials;2024-08-12

3. First-principles investigations and MOCVD growth of Si-doped β-Ga2O3 thin films on sapphire substrates for enhancing Schottky barrier diode characteristics;Materials Science in Semiconductor Processing;2024-08

4. Strain mediated ultra-high electron mobility in Ge-doped two-dimensional Ga2O3;AIP Advances;2024-08-01

5. Ultra-high electron mobility in Sn-doped two-dimensional Ga₂O₃ modified by biaxial strain and electric field;Applied Physics Express;2024-08-01

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