CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs-Reference-Cited by-同舟云学术

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CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs

Published:2012-08 Issue: Volume:74 Page:71-76
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Czornomaz L.,El Kazzi M.,Hopstaken M.,Caimi D.,Mächler P.,Rossel C.,Bjoerk M.,Marchiori C.,Siegwart H.,Fompeyrine J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Doping of In0.53Ga0.47As and In0.52Al0.48As by Si+ and Be+ ion implantation;Hailemariam;J Appl Phys,1992

2. InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology;Singisetti;Phys Status Solidi C,2009

3. Lattice-mismatched In0.4Ga0.6As source/drain stressors with in situ doping for strained In0.53Ga0.47As channel n-MOSFETs;Chin;IEEE Electron Dev Lett,2009

4. Ex situ Ohmic contacts to n-InGaAs;Baraskar;J Vac Sci Technol B,2010

5. In0.7Ga0.3As channel n-MOSFET with self-aligned Ni–InGaAs source and drain;Zhang;Electrochem Solid-State Lett,2010

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4. Schottky barrier contact on In_0.53Ga_0.47As with short-wave infrared transparent conductive oxide;Applied Physics Letters;2022-12-05

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