Phase decomposition in the Ni–InGaAs system at high annealing temperature
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
https://link.springer.com/content/pdf/10.1007/s10853-023-09037-7.pdf
Reference50 articles.
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3. Geum D-M, Park M-S, Lim JY, Yang H-D, Song JD, Kim CZ, Yoon E, Kim S, Choi WJ (2016) Ultra-high-throughput production of III-V/Si wafer for electronic and photonic applications. Sci Rep 6:20610. https://doi.org/10.1038/srep20610
4. C.B. Zota, C. Convertino, V. Deshpande, T. Merkle, M. Sousa, D. Caimi, L. Czomomaz, (2018) InGaAs-on-insulator MOSFETs featuring scaled logic devices and record RF performance, in: 2018 IEEE symposium on VLSI technology, IEEE: pp 165–166. https://doi.org/10.1109/VLSIT.2018.8510631
5. Del Alamo JA, Antoniadis DA, Lin J, Lu W, Vardi A, Zhao X (2016) Nanometer-Scale III-V MOSFETs. IEEE J Electr Dev Soc 4:205–214. https://doi.org/10.1109/JEDS.2016.2571666
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