InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology-Reference-Cited by-同舟云学术

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InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

Published:2009-06 Issue:6 Volume:6 Page:1394-1398
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Singisetti Uttam,Wistey Mark A.,Burek Gregory J.,Arkun Erdem,Baraskar Ashish K.,Sun Yanning,Kiewra Edward W.,Thibeault Brian J.,Gossard Arthur C.,Palmstrøm Chris J.,Rodwell Mark J. W.

Publisher

Wiley

Subject

Condensed Matter Physics

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5. Record Effective Mobility Obtained From In0.53Ga0.47As/In0.52Al0.48As Quantum-Well MOSFETs on 300-mm Si Substrate;IEEE Electron Device Letters;2017-06

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