Analysis of 14nm technology node In0.53Ga0.47As nFinFET integrated with In0.52Al0.48As cap layer for high-speed circuits
Author:
Affiliation:
1. Department of Electronics Engineering, Sardar Vallabhabhai National Institute of Technology, Surat, India
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00207217.2019.1600738
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1. 20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications
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4. A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel GaAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack
5. An Optimisation Based Study of Underlap Architecture of Sub 16 nm Double Gate MOSFET for Enhanced Analog Performance
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1. Impact of Spacers in Raised Source/Drain 14 nm Technology Node In$$_{0.53}$$Ga$$_{0.47}$$As-nFinFET on Short Channel Effects;Lecture Notes in Electrical Engineering;2020-08-29
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