20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, Karunya University, Coimbatore, India
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00207217.2016.1218066
Reference30 articles.
1. A review of InP/InAlAs/InGaAs based transistors for high frequency applications
2. Enhancement-mode Al/sub 0.66/In/sub 0.34/As/Ga/sub 0.67/In/sub 0.33/As metamorphic HEMT, modeling and measurements
3. Integrated nanoelectronics for the future
4. A high aspect ratio design approach to millimeter-wave HEMT structures
5. THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors
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