Reducing the Source Resistance by Increasing the Gate Effect on Substrate for Future Terahertz HEMT Device
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Published:2021-12-30
Issue:4
Volume:19
Page:
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ISSN:1804-3119
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Container-title:Advances in Electrical and Electronic Engineering
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language:
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Short-container-title:AEEE
Author:
Derrouiche Soufiane
Publisher
VSB - Technical University of Ostrava
Subject
Electrical and Electronic Engineering