Simulation modelling of <scp>III‐Nitride</scp> / β ‐Ga 2 O 3 Nano‐HEMT for microwave and millimetre wave applications-Reference-Cited by-同舟云学术

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications

Published:2022-09-15 Issue:12 Volume:32 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Mic Comp-Aid Eng

Author:

Rao G. Purnachandra¹^ORCID,Singh Rajan²^ORCID,Lenka Trupti Ranjan¹^ORCID,Boukortt Nour El. I.³^ORCID,Nguyen Hieu Pham Trung⁴^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering National Institute of Technology Silchar Silchar India

2. Department of Electronics and Communication Engineering MLR Institute of Technology Hyderabad India

3. Electronics and Communication Engineering Department Kuwait College of Science and Technology Doha Qatar

4. Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark New Jersey USA

Funder

Science and Engineering Research Board

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

Reference78 articles.

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