In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain-Reference-Cited by-同舟云学术

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In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain

Published:2011 Issue:2 Volume:14 Page:H60
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Zhang Xingui,Guo Huaxin,Gong Xiao,Zhou Qian,Lin You-Ru,Lin Hau-Yu,Ko Chih-Hsin,Wann Clement H.,Yeo Yee-Chia

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference24 articles.

1. Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric

2. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

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1. Phase decomposition in the Ni–InGaAs system at high annealing temperature;Journal of Materials Science;2023-10

2. Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing;Nanotechnology;2021-11-24

3. Microstructural and phase evolutions of Pt contact to N-type In0.53Ga0.47As driven by rapid thermal annealing and its correlation with specific contact resistivity;Intermetallics;2021-06

4. Investigation of microstructural and electrical properties of self-aligned Ni-InGaAs alloy contacts to InGaAs as a function of rapid thermal annealing temperature;J CERAM PROCESS RES;2020

5. Investigation of the UTB-InAs-MOSFETs structure;Materials Science in Semiconductor Processing;2019-06

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