Investigation of the UTB-InAs-MOSFETs structure

Author:

Ammi Sofiane,Aissat Abdelkader,Wichmann Nicolas,Bollaert Sylvain

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. On the performance limits for Si MOSFET’s: a theoretical study;Assad;IEEE Tans. Electron Device,2000

2. Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current;Koh;IEEE Tans. Electron Device,2001

3. Inversion mode n-channel GaAs field effect transistor with high-k/metal gate;de Souza;J. Appl. Phys. Lett.,2008

4. High-k/metal gate stack and its MOSFET characteristics;Chau;IEEE Electron Device Lett.,2004

5. Mobility enhancement technology for scaling of CMOS devices: overview and status;Song;J. Electron. Mater.,2011

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