Impact of Composite Trench Stepped Hetero Channel MOSFET on Analog Performance-Reference-Cited by-同舟云学术

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Impact of Composite Trench Stepped Hetero Channel MOSFET on Analog Performance

Published:2022-02-26 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE VLSI Device Circuit and System (VLSI DCS)
language:
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Author:

Mohanty Soumya S.¹,Mishra Sikha¹,Mishra Guru Prasad²

Affiliation:

1. Siksha ‘O’ Anusandhan Deemed to be University,Institute of Technical Education and Research,Dept. of Electronics and Communication Engineering,Bhubaneswar,India

2. National Institute of Technology,Dept. of Electronics and Telecommunication Engineering,Raipur,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9811418/9811430/09811466.pdf?arnumber=9811466

Reference18 articles.

1. High performance InGaAs channel MOSFETs on highly resistive InAlAs buffer layers

2. Extended-$\hbox{p}^{+}$ Stepped Gate LDMOS for Improved Performance

3. Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications

4. 20 nm high performance novel MOSHEMT on InP substrate for future high speed low power applications

5. High Performance and Reliability Analysis of Implant Free Composite Channel In0.53Ga0.47As/InAs/In0.53Ga0.47As Delta-Doped MOSFET

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