Author:
Ajayan J.,Subash T.D.,Kurian Dheena
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference48 articles.
1. Nanometre electronics with III–V compound semiconductors;Del Alamo;Nature,2011
2. Nanometer-scale III-V MOSFETs;Del Alamo;J. Electron Devices Soc.,2016
3. On the performance limits for Si MOSFETs: a theoretical study;Assad;IEEE Trans. Electron Devices,2000
4. A review of InP/InAlAs∖InGaAs based transistors for high frequency applications;Ajayan;Superlattices Microstruct. Elsevier,2015
5. Inverted-type InGaAs metal–oxide–semiconductor high-electron-mobility transistor on Si substrate with maximum drain current exceeding 2A/mm;Zhou;Appl. Phys. Express,2012
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