Author:
Lee Sang Tae,Lee In-Geun,Jang Hyunchul,Kong Minwoo,Song Changhun,Kim Chang Zoo,Jung Sang Hyun,Choi Youngsu,Kim Shinkeun,Eom Su-keun,Seo Kwang-seok,Kim Dae-Hyun,Ko Dae-Hong,Shin Chan-Soo
Funder
National Research Foundation of Korea
Institute of Civil-Military Technology Cooperation
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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4. Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s;Shin,2014
5. Metal-organic vapor-phase epitaxy growth of InP-based HEMT structures with InGaAs/InAs composite channel;Sugiyama,2012
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