Doping of In0.53Ga0.47As and In0.52Al0.48As by Si+and Be+ion implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350745
Reference25 articles.
1. Near‐ideal lateral scaling in abrupt Al0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors prepared by molecular beam epitaxy
2. In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As abrupt double-heterojunction bipolar transistors
3. Self-aligned In0.53Ga0.47As/semi-insulating/n+InP junction field-effect transistors
4. GaAlInAs ternary and quaternary alloys lattice matched to InP for electronic, optoelectronic and optical device applications, by LP-MOVPE
5. Halogen lamp rapid thermal annealing of Si- and Be-implanted In0.53Ga0.47As
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