InGaAs/InAlAs avalanche photodiodes with a high responsivity and multiplication factor using carbon-doped p-InAlAs as the charge layer

Author:

Li Chengyu,Qiu Shiyu,Ruan Xindong,Liu Chao,Cheng Qijin

Publisher

Elsevier BV

Reference48 articles.

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2. High-performance self-driven near-infrared photodetector based on single-walled carbon nanotube/graphene/Al2O3/InP;Chen;Mater. Today Commun.,2022

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4. Low dark current high gain InAs quantum dot avalanche photodiodes monolithically grown on Si;Chen;ACS Photonics,2020

5. Temperature-Dependent Characteristics of HgCdTe Mid-Wave Infrared E-Avalanche Photodiode;Zhu;IEEE J. Sel. Top. Quantum Electron,2022

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