WITHDRAWN: N-type doping strategies for InGaAs-Reference-Cited by-同舟云学术

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WITHDRAWN: N-type doping strategies for InGaAs

Published:2017-01 Issue: Volume:57 Page:39-47
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Aldridge Henry,Lind Aaron G.,Bomberger Cory C.,Puzyrev Yevgeniy,Zide Joshua M.O.,Pantelides Sokrates T.,Law Mark E.,Jones Kevin S.

Funder

Intel and the Semiconductor Research Corporation

NSF

Delaware Space Grant College and Fellowship Program

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference102 articles.

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2. The International Technology Roadmap for Semiconductors 〈http://www.itrs2.net/itrs-news.html〉.

3. L. Czornomaz, N. Daix, K. Cheng, D. Caimi, C. Rossel, K. Lister, M. Sousa, J. Fompeyrine, Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates, in: Proceedings of the IEEE International Electron Devices Meeting, 2013, 2.8.1–2.8.4. doi: http://dx.doi.org/10.1109/IEDM.2013.6724548

4. S. Takagi, M. Takenaka, III–V/Ge CMOS technologies on Si platform, in: Proceedings of the Symposium on VLSI Technology, 2010, 147–148. doi: http://dx.doi.org/10.1109/VLSIT.2010.5556205.

5. M.J.W. Rodwell, M. Wistey, U. Singisetti, G. Burek, A. Gossard, S. Stemmer, R. Engel-Herbert, Y. Hwang, Y. Zheng, C.V. de Walle, P. Asbeck, Y. Taur, A. Kummel, B. Yu, D. Wang, Y. Yuan, C. Palmstrom, E. Arkun, P. Simmonds, P. McIntyre, J. Harris, M.V. Fischetti, C. Sachs, Technology development & design for 22nm InGaAs/InP-channel MOSFETs, in: Proceedings of the 20th International Conference on Indium Phosphide and Related Materials, 2008, 1–6. doi: http://dx.doi.org/10.1109/ICIPRM.2008.4703066.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma processing for advanced microelectronics beyond CMOS;Journal of Applied Physics;2021-08-28

2. Tunnel Junctions for III-V Multijunction Solar Cells Review;Crystals;2018-11-28

3. Ab initio modeling of vacancies, antisites, and Si dopants in ordered InGaAs;Journal of Applied Physics;2017-01-28

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