Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates-Reference-Cited by-同舟云学术

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Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates

Published:2013-12 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Czornomaz L.,Daix N.,Cheng K.,Caimi D.,Rossel C.,Lister K.,Sousa M.,Fompeyrine J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724548.pdf?arnumber=6724548

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon;Nature Electronics;2021-02

2. Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy;Nanotechnology;2018-12-31

3. Ge-cap quantum-well bulk FinFET for 5 nm node CMOS integration;Japanese Journal of Applied Physics;2018-03-15

4. III-V Devices and Technology for CMOS;High Mobility Materials for CMOS Applications;2018

5. A review of III–V planar nanowire arrays: selective lateral VLS epitaxy and 3D transistors;Journal of Physics D: Applied Physics;2017-09-01

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