Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography
Author:
Publisher
Elsevier BV
Subject
Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. Current status and perspectives of ultrahigh-voltage SiC power devices;Kimoto;Mater. Sci. Semicond. Process,2018
2. 0.63 mΩcm2 / 1170V 4H-SiC Super Junction V-Groove Trench MOSFET;Masuda;IEEE Electron Device Metting (IEDM),2018
3. Structural instability of 4H-SiC polytype induced by n-type doping;Liu;Appl. Phys. Lett.,2002
4. Influence of nitrogen doping on the properties of 4H-SiC single crystals grown by physical vapor transport;Rost;J. Cryst. Growth,2003
5. Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing;Tokuda;J. Appl. Phys.,2017
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03
2. Effects of proton implantation into 4H-SiC substrate: Stacking faults in epilayer on the substrate;Materials Science in Semiconductor Processing;2024-06
3. Crack healing behavior of 4H-SiC: Effect of dopants;Journal of Applied Physics;2023-04-13
4. Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation;Scientific Reports;2022-08-15
5. Deformation of 4H-SiC: The role of dopants;Applied Physics Letters;2022-01-31
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3