Effects of proton implantation into 4H-SiC substrate: Stacking faults in epilayer on the substrate
Author:
Funder
New Energy and Industrial Technology Development Organization
Publisher
Elsevier BV
Reference40 articles.
1. SiC mass commercialization: present status and barriers to overcome;Veliadis;Mater. Sci. Forum,2022
2. Review of thermal packaging technologies for automotive power electronics for traction purposes;Broughton;J. Electron. Packag.,2018
3. Development of SiC applied traction system for next-generation shinkansen high-speed trains;Sato;IEEJ. J. Ind. Appl,2020
4. Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes;Bergman;Mater. Sci. Forum,2001
5. Recombination-enhanced defect motion in forward-biased 4H–SiC diodes;Skowronski;J. Appl. Phys.,2002
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1. Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation;Applied Physics Express;2024-08-01
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