Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1505994
Reference24 articles.
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5. Nature of 〈110〉 dark‐line defects in degraded (GaAl)As‐GaAs double‐heterostructure lasers
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