Structural instability of 4H–SiC polytype induced by n-type doping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1463203
Reference8 articles.
1. Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals
2. Stacking fault band structure in 4H–SiC and its impact on electronic devices
3. Nucleation of threading dislocations in sublimation grown silicon carbide
4. Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation
5. Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions
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2. First-principles investigation of the effects of excess carriers on the polytype stability and stacking fault energies of SiC;Journal of Applied Physics;2023-10-17
3. Saturation thickness of stacked SiO2 in atomic-layer-deposited Al2O3 gate on 4H-SiC;Chinese Physics B;2023-07-01
4. Structural investigation of triangular defects in 4H-SiC epitaxial layers as nucleation source for bar shaped stacking faults (BSSFs);Journal of Physics D: Applied Physics;2023-05-10
5. Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation;Scientific Reports;2022-08-15
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