Structural instability of 4H–SiC polytype induced by n-type doping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1463203
Reference8 articles.
1. Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals
2. Stacking fault band structure in 4H–SiC and its impact on electronic devices
3. Nucleation of threading dislocations in sublimation grown silicon carbide
4. Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation
5. Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions
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