Nucleation of threading dislocations in sublimation grown silicon carbide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1428088
Reference19 articles.
1. Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
2. Characterization of SiC using Synchrotron White Beam X-ray Topography
3. Structural defects in α-SiC single crystals grown by the modified-Lely method
4. Breakdown Degradation Associated With Elementary Screw Dislocations In 4H-SiC P+N Junction Rectifiers
5. An atomic force microscopy study of super-dislocation/micropipe complexes on the 6H-SiC(0 0 0 1) growth surface
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