An atomic force microscopy study of super-dislocation/micropipe complexes on the 6H-SiC(0 0 0 1) growth surface-Reference-Cited by-同舟云学术

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An atomic force microscopy study of super-dislocation/micropipe complexes on the 6H-SiC(0 0 0 1) growth surface

Published:1997-11 Issue:4 Volume:181 Page:351-362
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Giocondi Jennifer,Rohrer Gregory S.,Skowronski Marek,Balakrishna V.,Augustine G.,Hobgood H.M.,Hopkins R.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Power semiconductor device figure of merit for high-frequency applications

2. Growth of large SiC single crystals

3. Structural macro-defects in 6H-SiC wafers

4. Large diameter 6H-SiC for microwave device applications

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2. Influence of the growth conditions on the formation of macro-steps on the growth interface of SiC-Crystals;Journal of Crystal Growth;2021-12

3. Dislocations in 4 H ‐ SiC Substrates and Epilayers;Wide Bandgap Semiconductors for Power Electronics;2021-10-29

4. Transformation of hollow-core screw dislocations: transitional configuration of superscrew dislocations;Japanese Journal of Applied Physics;2020-08-20

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