Influence of nitrogen doping on the properties of 4H–SiC single crystals grown by physical vapor transport
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC
2. Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H Polytype
3. Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation
4. 4H- to 3C-SiC Polytypic Transformation during Oxidation
5. Surface Morphology and Chemistry of 4H- and 6H-SiC after Cyclic Oxidation
Cited by 44 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantification of nitrogen in heavily doped silicon carbide by soft X-ray emission spectroscopy;Journal of Crystal Growth;2023-10
2. <i>In Situ</i> Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry;Materials Science Forum;2022-05-31
3. Effect of cerium impurity on the stable growth of the 4H-SiC polytype by the physical vapour transport method;Journal of Crystal Growth;2022-05
4. Immobilization of partial dislocations bounding double Shockley stacking faults in 4H-SiC observed by in situ synchrotron X-ray topography;Materialia;2021-12
5. Reduction of threading screw dislocations in 4H-SiC crystals by a hybrid method with solution growth and physical vapor transport growth;Journal of Crystal Growth;2021-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3