Immobilization of partial dislocations bounding double Shockley stacking faults in 4H-SiC observed by in situ synchrotron X-ray topography
Author:
Publisher
Elsevier BV
Subject
General Materials Science
Reference43 articles.
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 4H to 3C Polytypic Transformation in Al+ Implanted SiC During High Temperature Annealing;Electronic Materials Letters;2023-12-02
2. Suppression of partial dislocation glide motion during contraction of stacking faults in SiC epitaxial layers by hydrogen ion implantation;Applied Physics Express;2023-02-01
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