Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing-Reference-Cited by-同舟云学术

Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing

Published:2017-07-27 Issue:4 Volume:122 Page:045707
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Tokuda Y.¹²³,Yamashita T.¹⁴,Kamata I.⁵,Naijo T.¹⁶,Miyazawa T.⁵,Hayashi S.¹⁶,Hoshino N.⁵,Kato T.¹,Okumura H.¹^ORCID,Kimoto T.³,Tsuchida H.⁵

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

2. DENSO Corporation, 500-1 Minamiyama, Komenoki, Nisshin, Aichi 470-0111, Japan

3. Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan

4. SHOWA DENKO K.K., 1-13-9 Shibadaimon, Minato, Tokyo 105-8518, Japan

5. Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan

6. Toray Research Center, Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567, Japan

Funder

New Energy and Industrial Technology Development Organization (NEDO)

Ministry of Education, Culture, Sports, Science and Technology (MEXT)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference39 articles.

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5. Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport

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